Smd transistor equivalent. BJT; MOSFET; IGBT; SCR; .

Smd transistor equivalent Transistor 2N3906: Pinout, Equivalent and Specs 9014M-C Transistor Datasheet pdf, 9014M-C Equivalent. 0 3. BJT; APPS KTN2222AS Datasheet, Equivalent, Cross Reference Search Type Designator: KTN2222AS SMD Transistor Code: ZG Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 95 -0. The BC817 Transistor is a general-purpose N-P-N transistor; A junction transistor is simply a sandwiched construction between two layers of N-type material or P-type material. BJT; MOSFET; IGBT; SCR; BC807 Datasheet, Equivalent, Cross Reference Search Type Designator: BC807 SMD Transistor Code: 5D_5Dp_5Dt_5DW_5DZ Material of Transistor: Si Polarity: PNP Maximum Collector Power . 2T3117A Datasheet. All Transistors. MMBT3904 Datasheet (PDF) . The BC817 Transistor is a general-purpose N-P-N transistor; A junction BC847 Transistor Datasheet pdf, BC847 Equivalent. 3 W SS8050 Transistor Equivalent Substitute - Cross-Reference Search SS8050 MOTNPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity: NPN General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner circuit SI2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . L8050QLT1G Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS S9014-MS Datasheet, Equivalent, Cross Reference Search Type Designator: S9014-MS SMD Transistor Code: J6 Material of Transistor: Si Polarity: NPN Maximum Collector Power 2SA812 Transistor Datasheet pdf, 2SA812 Equivalent. 1 A Max. FMMT619 Datasheet. COLLECTORFEATURES: High transition frequency Small rbbCc and high gain. 2 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - Rise BC847C Transistor Datasheet pdf, BC847C Equivalent. Basic Working of a Transistor. pdf isc Silicon NPN Power Transistor BD142DESCRIPTIONLow Collector Saturation VoltageHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF large signal power amplification. Ci Nce4435 - Mosfet Nce 4435 - Smd - Original - 1 Peça. KST8550S Datasheet. 5 VrDS(on) = 0. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. 31 W Maximum Collector-Base D965-KEHE Transistor Datasheet pdf, D965-KEHE Equivalent. 11 FMMT619 Transistor Datasheet pdf, FMMT619 Equivalent. 4-0. 3415 Datasheet (PDF) . Datasheet pdf. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 13001 Datasheet, Equivalent, Cross Reference Search BC807 Transistor Datasheet pdf, BC807 Equivalent. BASE2. 3 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Id|ⓘ - Maximum Drain Current: 4. Emitter Absolute Maximum Ratings Ta 3407 MOSFET. 1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. BC858F Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC847C Datasheet, Equivalent, Cross Note: More technical specifications about BC817 transistor can be found in the BC817 datasheet attached at the end of this page. 0pF AL Complements of the 2SA1037 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2412-Q 2SC2412-R 2SC2412-S IRF540N MOSFET. onsemi. BJT; APPS 2SC1623-L7 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623-L7 SMD Transistor Code: L7 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc BC547C Datasheet, Equivalent, Cross Reference Search Type Designator: BC547C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Size:456K secos 2sc2412. _5Ap_5As_5At_5AW_5AZ_9FA_K5A_LAA Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 040 @VGS =2. Equivalent Type Designator: SI2345DS Marking Code: A18E Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. A44 Datasheet ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44SOT-223Formed SMD PackageHigh Voltage TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE S8550LT1 Transistor Datasheet pdf, S8550LT1 Equivalent. 35 W Maximum Collector-Base Voltage SMD Transistor Code: 1A_1AM_1N_7Ap_7At_7AW_K1N Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; SMD Type TransistorsSMD TypePNP Transistors KST8550DSOT-23Unit: mm+0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS SS8550-H Datasheet, Equivalent, Cross Reference Search Type Designator: SS8550-H SMD Transistor Code: HY2D Material of Transistor: Si Polarity: PNP Maximum Collector Power AFT3904 Transistor Datasheet pdf, AFT3904 Equivalent. 3 W 2N2904 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2904 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. As complementary type the NPN transistor 2SC1815 is recommended. 31 W Maximum Collector-Base 2N2907 Transistor Datasheet pdf, 2N2907 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2222A Datasheet, Equivalent, Cross Reference Search SMD Type TransistorsNPN Transistors FZT2222A (KZT2222A)Unit:mmSOT-2236. BJT; MOSFET; IGBT; SCR; 2T3117A Datasheet, Equivalent, Cross Reference Search Type Designator: 2T3117A SMD Transistor Code: 2Т3117А Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: SI2300 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1. B772 Datasheet. 2 BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC AD-SS8550* series Plastic-Encapsulated Transistor AD-SS8550* series Transistor (PNP) FEATURES High Collector Current Complimentary to AD-SS8050 AEC-Q101 qualified Version 1. SS8550 Transistor Equivalent Substitute - Cross-Reference Search SS8550MOTPNP TRANSISTOR PNP PNP High Voltage Transistor SMD SS8550 PNP, BEC Transistor Polarity: PNP General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y2 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner circuit SMD Transistor Code: R25 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: SI2302 Marking Code: A2sHB Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1. 2SA1013 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS S8550LT1 Datasheet, Equivalent, Cross Reference Search Type Designator: S8550LT1 SMD Transistor Code: 2TY Material of Transistor: Si Polarity: PNP Maximum Collector Power S9014-MS Transistor Datasheet pdf, S9014-MS Equivalent. 47 BCR142 Transistor Equivalent Substitute - Cross-Reference Search . BJT; MOSFET; IGBT; SCR; Type Designator: BC857BW SMD Transistor Code: 3F_3F-_3Ft_3FW_K3b-k3W Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; APPS FMMT619 Datasheet, Equivalent, Cross Reference Search Type MBTA42 Transistor Datasheet pdf, MBTA42 Equivalent. MMBT2907 Datasheet. S9016 Datasheet. BCR142 Datasheet (PDF) . Electronic Component Catalog. 3 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0. BJT; MOSFET; IGBT; APPS FMMT619 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT619 SMD Transistor Code: 619 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 625 W BC847C Transistor Datasheet pdf, BC847C Equivalent. (9 avaliações) 5. Product overviewType PDTC143ZT Datasheet, Equivalent, Cross Reference Search Type Designator: PDTC143ZT SMD Transistor Code: p18_t18_W18 Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 4. Cross Reference Search. 2 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 4. Size:1496K goford PD - 94267HEXFET POWER MOSFET IRF5N3415SURFACE MOUNT (SMD-1)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0. 33 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 0 (1) R$ 24, 90. KT3107B Datasheet. EMITTER3. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS MMBT5551 Datasheet, Equivalent, Cross Reference Search SMD Type TransistorsSMD TypeNPN Transistors 20 Pçs Mosfet A09t Ao3400 3400 Smd Transistor Sot23 Original. 9k. BC847 Datasheet. 7 kOhm Built in Bias Resistor R2 = 47 kOhm. 1 Maximum Collector Power Dissipation (Pc): 0. pdf isc Silicon NPN Power Transistor BD907DESCRIPTIONDC Current Gain -: h = 40@ I = 0. Electronic Component Catalog 2N4036 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N4036 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 1 W Maximum Collector-Base Voltage |Vcb|: 90 V Maximum Collector-Emitter Voltage |Vce|: 65 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 1 A Max. 4 A Tjⓘ - Maximum Junction Temperature: 150 °C BC857B Transistor Datasheet pdf, BC857B Equivalent. 2 W Maximum Collector-Base Voltage |Vcb|: 20 V 2SC3356 TRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231. BC807-16 Datasheet. KTN2222AS Datasheet. Size:292K first silicon 3DD13005MD-O-Z-N-C Transistor Datasheet pdf, 3DD13005MD-O-Z-N-C Equivalent. Size:1614K jiangsu (SMD) plastic package. Collector3. Collector3 CMMT491 Transistor Datasheet pdf, CMMT491 Equivalent. ABSOLUTE MAXIMUM RATINGS 3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 2. Emitter 2. 75 W 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. 1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Equivalent, Cross Reference Search Type Designator: 3DD13005MD-O-Z-N-C SMD Transistor Code: D13005MD Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 75 PMBT2222A Transistor Datasheet pdf, PMBT2222A Equivalent. 12. MMBTSC1623-L6 Datasheet. 1+0. 5A+0. 2SA812 Datasheet. , LTD TO-92 Plastic-Encapsulate Transistors2N5550 TRANSISTOR (NPN)TO-92 FEATURES Switching and mplification in igh oltage1. 3 data sheet d882 npn plastic-encapsulate transistors voltage 30 v current 3 a features complementary to b772 collector current ic = 3a e collector-emitter voltage vce = 30v c lead free and halogen-free sot-89 e c to-126 bb mechanical data to-252 to-251 case: sot-89,to-126,to-251,to-252 terminals: solderable per mil-std-202g, method 208 c e e BC807-25LT1G Transistor Datasheet pdf, BC807-25LT1G Equivalent. Typical Resistor Ratio R1/R2 = 0. 5 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0. The BC847 transistor is a general-purpose N-P-N transistor. 225 W Available in SOT23 SMD package; Note: The complete technical information can be found at the datasheet given at the end of this page. S8550LT1 Datasheet. BJT; MOSFET; IGBT; APPS AFT3904 Datasheet, Equivalent, Cross Reference Search Type Designator: AFT3904 SMD Transistor Code: 1AM Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; SMD CODE SMD Type TransistorsPNP Transistors2SA10131. 6 A Max. 4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1. BJT; MOSFET; IGBT; SCR; APPS MBTA42 Datasheet, Equivalent, Cross Reference Search Type Designator: MBTA42 SMD Transistor Code: 1D Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc ): 0. Base2. Parameters and Characteristics This transistor is the SMD equivalent for the popular BC547/BC847 transistor, which is commonly used in many general-purpose applications like switching circuits to control low current loads like pumps, BC847 Equivalent Transistor. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 9015 Transistor Datasheet pdf, 9015 Equivalent. AO3407 Datasheet. MMBT5551LT1G Datasheet. J111 MOSFET. 5V)12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit 2T3117A Transistor Datasheet pdf, 2T3117A Equivalent. 2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1. 13001 Transistor Datasheet pdf, 13001 Equivalent. COLLECTOR Equivalent Circuit 2N5550=Device code 2N Solid dot=Green molding SMD Transistor Code: 8C Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 22 kOhm Built in Bias Resistor R2 = 22 kOhm DTC703 Transistor Equivalent Substitute - Cross-Reference Search . Size:35K siemens 2222A Transistor Datasheet pdf, 2222A Equivalent. PMBT2907A Datasheet. 15 W MMBT3904L Transistor Datasheet pdf, MMBT3904L Equivalent. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. BJT; MOSFET; IGBT; APPS KN4403S Datasheet, Equivalent, Cross Reference Search Type Designator: KN4403S SMD Transistor Code: ZWA Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BJT; APPS D965-KEHE Datasheet, Equivalent, Cross Reference Search Type Designator: D965-KEHE SMD Transistor Code: D9CU Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 9015 Datasheet. 0 1 / 6 2021-07-01 www. BC847C Datasheet. BJT; APPS L8050QLT1G Datasheet, Equivalent, Cross Reference Search Type Designator: L8050QLT1G SMD Transistor Code: 1YC Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 1 -0. BC807 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; BC847 Datasheet, Equivalent, Cross Reference Search Type Designator: BC847 SMD Transistor Code: 1H_1Hp_1Ht_1HW Material of Transistor: Si Polarity: NPN Maximum Collector Power MMBT5551 Transistor Datasheet pdf, MMBT5551 Equivalent. Absolute Maximum Ratings Ta = S8050B Transistor Equivalent Substitute - Cross-Reference Search . 11. 2SD596DV4 Datasheet. 4 -0. 23. AFT3904 Datasheet. BJT; MOSFET; IGBT; SCR; SMD Type TransistorsPNP Transistors2SA10131. . 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V |Id|ⓘ - Maximum Drain Current: 2. 4 W IRFP9240 MOSFET. BCR133 Datasheet (PDF) . 35 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V |Id|ⓘ - Maximum Drain Current: 4. Equivalent Type Designator: 3407 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 0. BC817-40 Datasheet. COLLECTOR 2. comFeatures High DC Current Gain1. BJT; APPS 2SC1623-L6 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623-L6 SMD Transistor Code: L6 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Table 1. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS MMBT2907 Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT2907 SMD Transistor Code: 2B Material of Transistor: Si Polarity: PNP Maximum Collector Power . Mosfet Smk0460 Smk 0460 Smk0460d Smd To252 Original. KT361B Datasheet. Equivalent Type Designator: SI2301DS Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 225 W Maximum Collector-Base Voltage |Vcb 2302 MOSFET. BJT; MOSFET; IGBT; SCR; 2SA812 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA812 SMD Transistor Code: M4_M5_M6_M7 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; SMD CODE; SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: MMBT2222A Transistor Datasheet pdf, MMBT2222A Equivalent. 2N2907 Datasheet. D965-KEHE Datasheet. 13Features1 2Collector Current: IC=-1. BJT; MOSFET; APPS KT3107B Datasheet, Equivalent, Cross Reference Search Type Designator: KT3107B SMD Transistor Code: КТ3107Б Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Size:27K siemens 3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 2SC1623-L5 Datasheet. BFT92 Datasheet. 5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International BD136G, BD138G, BD140GPlastic Medium-PowerSilicon PNP TransistorsThis series of plastic, medium-power silicon PNP transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits. Depending B772 Transistor Equivalent Substitute - Cross-Reference SMD Type TransistorsPNP Transistors2SB772A Features1. S8050 Marking J3Y NPN smd transistor sot 23 Replacement and equivalent. 25 W 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SI2301DS Datasheet. 5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135 KT361B Transistor Datasheet pdf, KT361B Equivalent. L8050HQLT1G Datasheet. 1-0. 3 V KST8550S Transistor Datasheet pdf, KST8550S Equivalent. BC550 Datasheet, Equivalent, Cross Reference Search Type Designator: BC550 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; MOSFET; IGBT; SCR; Type Designator: BC807-25LT1G SMD Transistor SI2302 MOSFET. Transistor Database. 1 Features High voltage Large continuous collector current capability0. 2N3904 Other NPN Transistors: BC549, BC636, BC639, 2N2222 TO-92, 2N2222 TO-18, 2N2369, 2N3055, 2N3906, 2SC5200 . 2SC4226-R25 Datasheet. BJT; PMBT2907A Datasheet, Equivalent, Cross Reference Search Type Designator: PMBT2907A SMD Transistor Code: 2F_P2F_p2F_p2F_t2F_W2F Material of Transistor: Si Polarity: PNP Maximum Collector AFT3904 Transistor Datasheet pdf, AFT3904 Equivalent. www. BJT; MOSFET; UMH6N Datasheet, Equivalent, Cross Reference Search Type Designator: UMH6N BC857BW Transistor Datasheet pdf, BC857BW Equivalent. 13FeaturesExcellent hFE 2SA1013 Transistor Datasheet pdf, 2SA1013 Equivalent. 2 W Maximum MMBT3904 Transistor Equivalent Substitute - Cross-Reference Search . BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BCP53 Datasheet, Equivalent, Cross Reference Search SMD Type TransistorsPNP TransistorsBCP51,BCP52,BCP53(KCP51,KCP52,KCP53)Unit:mmSOT-2236. 4+0. 4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V |Id|ⓘ - Maximum Drain Current: 0. 5 W All Transistors Datasheet. 160V)3. 6 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Base 3. 1 Features High Available in SOT23 SMD package; Note: The complete technical information can be found at the datasheet given at the end of this page. 600mA)2. Equivalent Type Designator: SMK630D Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 45 W |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V |Id|ⓘ - Maximum Drain Current: 9 A Tjⓘ - Maximum Junction Temperature: 150 °C MMBT2907 Transistor Datasheet pdf, MMBT2907 Equivalent. BJT; MOSFET; IGBT; Type Designator: MMBT2222A SMD Transistor Code: 1P_7Cp_7Ct_7CW_K1P_M2A_s1P Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Emitter Absolute Maximum Ratings Ta BC807-16 Transistor Datasheet pdf, BC807-16 Equivalent. 2 V S9016 Transistor Datasheet pdf, S9016 Equivalent. BC639 Datasheet, Equivalent, Cross Reference Search Type Designator: BC639 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 1 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. BC817-25 Datasheet. 35 W A44 Transistor Datasheet pdf, A44 Equivalent. BUY TRANSISTORS. BASE High oltage( ax. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS 5551 Datasheet, Equivalent, Cross Reference Search Type Designator: SI2301DS MOSFET. Equivalent Type Designator: AO3400 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1. 5 V. On special request, these transistors can be manufactured in different pin configurations. 4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Id|ⓘ - Maximum Drain Current: 5. 2SC1623-L6 Datasheet. BJT; MOSFET; Type Designator: BC817-40 SMD Transistor Code: 2P_6C_6Cp_6Cs_6Ct_6CW_6CZ_8FC_K6C_NAC Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. D882 Transistor Datasheet pdf, D882 Equivalent. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Equivalent Type Designator: 3401A Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 36 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2. 225 W S9018 Datasheet, Equivalent, Cross Reference Search Type Designator: S9018 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 1. BJT; MOSFET; IGBT; SCR; APPS 2N2907 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2907 SMD Transistor Code: 2B Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: J111 Type of Transistor: JFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. FMMT591 Datasheet. A44 Datasheet ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44SOT-223Formed SMD PackageHigh Voltage TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE BC857B Transistor Datasheet pdf, BC857B Equivalent. 70 0. Size:204K inchange semiconductor bd142. size:239k 1 st2310hi. Size:1693K goford Ltd SMD Type MOSFETN MOSFETDual N-Channel Enhancement Mode Field Effect TransistorS8205ATSSOP-8Unit: mmFeatures5A,20V. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC857B Datasheet, Equivalent, Cross Reference Search Type Designator: BC857B SMD Transistor Code: 3F_3Fp_3Fs_3Ft_3FW_9BB_G3F_K3b-k3W_UAB Material of Transistor: Si UMH6N Transistor Datasheet pdf, UMH6N Equivalent. MOSFET. BJT; MOSFET; IGBT; APPS FMMT591 Datasheet, Equivalent, Cross Reference Search Type Designator: FMMT591 SMD Transistor Code: 591 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 2N3904 Other NPN Transistors: BC549, SI2301DS Transistor Datasheet, SI2301DS Equivalent, PDF Data Sheets. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 9015 Datasheet, Equivalent, Cross Reference Search SMD Type TransistorsSMD TypePNP TransistorsKST9015-DSOT-23Unit: mm+0. 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type BD908Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. KN4403S Transistor Datasheet pdf, KN4403S Equivalent. BJT; MOSFET; IGBT; SCR; APPS BFT92 Datasheet, Equivalent, Cross Reference Search Type Designator: BFT92 SMD Transistor Code: W1_W1p_W1s Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation IRF630 MOSFET. BJT; SMD Transistor Code: L6 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Enviado pelo . BC857B Datasheet. pdf 2SC2412 0. 30. (1 avaliações) 5. 2 A Max. BJT; MOSFET; 2SC4226-R25 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC4226-R25 SMD Transistor Code: R24 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc Depending on the current transfer ratio, S8050 transistors in SMD package J3Y are divided into three types: L from 120 to 200; H from 200 to 350; J from 300 to 400. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC857B Datasheet, Equivalent, Cross Reference Search Type Designator: BC857B SMD Transistor Code: 3F_3Fp_3Fs_3Ft_3FW_9BB_G3F_K3b-k3W_UAB Material of Transistor: Si 2302 MOSFET. BC817-25 Transistor Datasheet pdf, BC817-25 Equivalent. MMBT5551 Datasheet. Size:423K motorola SMD Transistor Code: WZs Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 22 kOhm Built in Bias Resistor R2 = 47 kOhm. BJT; MOSFET; IGBT; APPS CMMT491 Datasheet, Equivalent, Cross Reference Search Type Designator: CMMT491 SMD Transistor Code: 491 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 3 Applications Automotive: 0. You can replace the MMBT3904LT1 with the 2SC3441, 2SC3912, 2SC3913, 2SC3914, 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. EMITTER Applications such as elephony Low urrent( ax. com AD-SS8550* series MAXIMUM RATINGS (T = 25C unless otherwise speci A42 Transistor Equivalent Substitute - Cross-Reference Search . DTC703 Datasheet (PDF) 9. 3DD13005MD-O-Z-N-C Datasheet. Size:35K siemens SMK630D MOSFET. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS Enter a full or partial SMD code with a minimum of 1 letters or numbers Code: Type Designator: Package: Description: 1AM AFT3904 SOT23: NPN 1AM DMBT3904 SOT-23: NPN 1AM GSTMMBT3904 SOT-23: NPN 2A; A*: IRLMS1902 2SD596DV4 Transistor Datasheet pdf, 2SD596DV4 Equivalent. 13001 Datasheet. BJT; MOSFET; Type Designator: BC807-16 SMD Transistor Code: 1M_5A_5A. In this text we will discuss the specifications of. D882 Datasheet. SS8050 MOTNPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity: NPN General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and MPSA05 Datasheet, Equivalent, Cross Reference Search Type Designator: MPSA05 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 5 A Max. MMBT5551LT1G Transistor Datasheet pdf, MMBT5551LT1G Equivalent. BC869 Datasheet. 01+0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC858F Datasheet, Equivalent, Cross Reference Search SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited BC817-40 Transistor Datasheet pdf, BC817-40 Equivalent. Avaliação 5 de 5. BJT; MOSFET; IGBT; SCR; SMD CODE; SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23Unit: mm Features+0. 9 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - Rise 2N2369 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2369 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. The MMBT3904LT1 transistor is marked as "1AM". Small NF. BJT; APPS 2SC1623-L5 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1623-L5 SMD Transistor Code: L5 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc 2SC1623-L7 Transistor Datasheet pdf, 2SC1623-L7 Equivalent. 4 W 0. 3 A B772 Transistor Datasheet pdf, B772 Equivalent. A1013 Datasheet. 1. 31 W Maximum Collector PMBT2907A Transistor Datasheet pdf, PMBT2907A Equivalent. NPN transistors are formed when a p-type 3401 MOSFET. All MOSFET. Equivalent Type Designator: IRF630 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 75 W |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 9 A Tjⓘ - Maximum Junction Temperature: 150 °C . 625 W SI2345DS MOSFET. 1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0. Download Table of equivalent SMD component – transistor and diode. A44 Transistor Datasheet pdf, A44 Equivalent. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1. BJT; PMBT2907A Datasheet, Equivalent, Cross Reference Search Type Designator: PMBT2907A SMD Transistor Code: 2F_P2F_p2F_p2F_t2F_W2F Material of Transistor: Si Polarity: PNP Maximum Collector 2SC4226-R25 Transistor Datasheet pdf, 2SC4226-R25 Equivalent. Instead, a somewhat arbitrary coding system has grown up, where the device package carries BC847C Transistor Datasheet pdf, BC847C Equivalent. Replacement and Equivalent for MMBT3904LT1 transistor. 0pF AL Complements of the 2SA1037 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2412-Q 2SC2412-R 2SC2412-S 2SC1623-L5 Transistor Datasheet pdf, 2SC1623-L5 Equivalent. BJT; MOSFET; Type Designator: BC817-25 SMD Transistor Code: 2N_6B_6Bp_6Bs_6Bt_6BW_6BZ_8FB_G6b-k6B_NAB Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BASE BC237 BC238 BC239 3. 10. BC807-25LT1G Datasheet. Transistor 2N3055: Pinout, Equivalent and Specs. SMD Transistor Code: WCs Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 10 kOhm Built in Bias Resistor R2 = 10 kOhm BCR133 Transistor Equivalent Substitute - Cross-Reference Search . As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. BJT; APPS MMBT3904L Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT3904L SMD Transistor Code: 1AM Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement SI2300 MOSFET. KN4403S Datasheet. 025 @VGS =4. 2222A Datasheet. 5551 Datasheet. 5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International BC807-16 Transistor Datasheet pdf, BC807-16 Equivalent. 1 0. 1FeaturesExcellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0. Equivalent Type Designator: IRFP9240 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 150 W |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V KT3107B Transistor Datasheet pdf, KT3107B Equivalent. , LTD TO-92 Plastic-Encapsulate TransistorsBC237 / BC238 / BC239 TRANSISTOR (NPN)FEATURES TO-92 Amplifier dissipation NPN Silicon 1. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; Product profile1. SS8550-H Datasheet. BJT; APPS 2SD596DV4 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD596DV4 SMD Transistor Code: DV4 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 5V)3 RDS(ON) 190m (VGS =-2. 14 Features Collector Current 3401 MOSFET. jscj-elec. 8 A Tjⓘ - Maximum Junction Temperature: 150 °C Note: More technical specifications about BC817 transistor can be found in the BC817 datasheet attached at the end of this page. 05 A Tjⓘ - Maximum Junction Temperature: 150 °C Cossⓘ - Output Capacitance: 3 pF Rdsⓘ - Maximum Drain-Source On 2N2955 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2955 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 042 37. BC857BW Datasheet. 2SC1623-L7 Datasheet. 8205A Datasheet (PDF) . 35 W BC869 Transistor Datasheet pdf, BC869 Equivalent. Intended for a wide variety of intermediate power applications. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; (SMD) plastic packages. 2 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - Rise FMMT619 Transistor Datasheet pdf, FMMT619 Equivalent. MMBT3904L Datasheet. 23 W L8050HQLT1G Transistor Datasheet pdf, L8050HQLT1G Equivalent. UMH6N Datasheet. S9014-MS Datasheet. 2 W AO3400 MOSFET. 050. pdf st2310hihigh voltage fast-switchingnpn power transistor new series, enhanced performance fully insulated package (u. Size:212K inchange semiconductor bd907. 3401A MOSFET. MMBT2222A Datasheet. 0 (9) R$ 22, 15. Suited for BC546 Transistor Equivalent Substitute - Cross-Reference Search Product profile1. Parameters and Characteristics. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V SI2301DS Transistor Datasheet, SI2301DS Equivalent, PDF Data Sheets. 25 W Maximum Collector-Base Voltage |Vcb MMF60R360QTH Transistor Datasheet, MMF60R360QTH Equivalent, PDF Data Sheets. BJT; MOSFET; IGBT; SCR; SMD CODE; KT361B Datasheet, Equivalent, Cross Reference Search Type Designator: KT361B SMD Transistor Code: КТ361Б Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc A1013 Transistor Datasheet pdf, A1013 Equivalent. BCP53 Datasheet. 5 W . On special request, these transistors can be 2SA1492 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1492 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 130 W Maximum Collector-Base Voltage |Vcb|: 180 V Maximum Collector-Emitter Voltage |Vce|: 180 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 15 A Max. 9 A Tjⓘ - Maximum Junction Temperature: 150 °C trⓘ - Rise FMMT619 Transistor Datasheet pdf, FMMT619 Equivalent. SI2301 Datasheet (PDF) SMD Type MOSFETP-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4. 2SC3851/3851ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)Application : Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A SS8550-H Transistor Datasheet pdf, SS8550-H Equivalent. Collector 3. BJT; SMD Type TransistorsPNP Transistors2SB772A Features1. BJT; MOSFET; L8050HQLT1G Datasheet, Equivalent, Cross Reference Search Type Designator: L8050HQLT1G SMD Transistor Code: 1HC Material of Transistor: Si Polarity: NPN Maximum Collector Power FMMT591 Transistor Datasheet pdf, FMMT591 Equivalent. 000. rDS(on) = 0. On special request, these transistors can be manufactured in different pin BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC All Transistors. 31 W Maximum Collector-Base JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. PMBT2222A Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; APPS S9016 Datasheet, Equivalent, Cross Reference Search Type Designator: S9016 SMD Transistor Code: Y6 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 1 A BFT92 Transistor Datasheet pdf, BFT92 Equivalent. AO3407 Transistor Datasheet, AO3407 Equivalent, PDF Data Sheets. 1 VDS (V) =-20V3 PMBT2907A Transistor Datasheet pdf, PMBT2907A Equivalent. 42 0. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. Equivalent Type Designator: IRF540N Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 130 W |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V 8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 2 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector MMBTSC1623-L6 Transistor Datasheet pdf, MMBTSC1623-L6 Equivalent. BJT; MOSFET; IGBT; APPS 9014M-C Datasheet, Equivalent, Cross Reference Search Type Designator: 9014M-C SMD Transistor Code: HJ6C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BJT; PMBT2222A Datasheet, Equivalent, Cross Reference Search Type Designator: PMBT2222A SMD Transistor Code: 1P_P1P_p1P_p1P_t1P_W1P Material of Transistor: Si Polarity: NPN Maximum Collector . 500. 46 0. 1 VDS (V) =-20V3 BCP53 Transistor Datasheet pdf, BCP53 Equivalent. MBTA42 Datasheet. Through Hole Equivalent for MMBT3904. 9014M-C Datasheet. MMBT3904, MMBT2222A, KST42, BC845, BC547 . 9 -0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS SMD Type TransistorsNPN Transistors2SD882A1. Product overviewType number[1] Package PNP 2SC1623-L6 Transistor Datasheet pdf, 2SC1623-L6 Equivalent. l. Datasheet. 2 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC 2N2369 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2369 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. CMMT491 Datasheet. 25 W 5551 Transistor Datasheet pdf, 5551 Equivalent. BJT; MOSFET; IGBT; SCR; Type Designator: MMBT5551LT1G SMD Transistor Code: G1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. A42 Datasheet (PDF) . Equivalent Type Designator: 2302 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V |Id|ⓘ - Maximum Drain Current: 2. MMBT3904 Brief Description KTN2222AS Transistor Datasheet pdf, KTN2222AS Equivalent. 2 W BC858F Transistor Datasheet pdf, BC858F Equivalent. compliant) for easy mounting high voltage capability ( > 1500 v) high switching speed tigther hfe control improved ruggedness3applications: 2 horizontal deflection for1monitors 15" and high end tvsisowatt218description the device is manu JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Equivalent Type Designator: 3401 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 23 W L8050QLT1G Transistor Datasheet pdf, L8050QLT1G Equivalent. bjkt fjwp rcgig jcuflwnu zqgr mlgsx qthfpiy lnrsm gbyd khhmw